PART |
Description |
Maker |
JS28F256P30B95A RD48F4000P0ZBQ0 JS28F128P30T85A TE |
Numonyx StrataFlash Embedded Memory Numonyx?StrataFlash? Embedded Memory (P30)
|
Micron Technology Numonyx B.V
|
JS28F256P33BF JS28F256P33BFE |
NumonyxTM StrataFlash Embedded Memory
|
Micron Technology
|
JS28F256P33BFA 320003 |
NumonyxTM StrataFlash Embedded Memory P33 (256-Mbit, 256-Mbit/256- Mbit) 130nm to 65nm
|
Numonyx B.V
|
JS48F4400P0R0C0 JS48F4400P0R0Q0 JS48F4400P0R0W0 JS |
StrataFlash垄莽 Cellular Memory StrataFlash庐 Cellular Memory StrataFlash? Cellular Memory StrataFlash? Cellular Memory
|
Numonyx B.V http://
|
PC28F128J3A PC28F128J3C |
StrataFlash Memory
|
Intel Corporation
|
JS28F128J3A |
Intel StrataFlash Memory (J3)
|
Intel Corporation
|
GE28F256L30T110 GE28F128L30B110 |
1.8 Volt Intel StrataFlashWireless Memory with 3.0-Volt I/O (L30) 16M X 16 FLASH 1.8V PROM, 88 ns, PBGA79 1.8 Volt Intel StrataFlashWireless Memory with 3.0-Volt I/O (L30) 8M X 16 FLASH 1.8V PROM, 88 ns, PBGA56
|
Intel, Corp.
|
DA28F640J5-150 DA28F320J5-120 G28F640J5-150 G28F32 |
StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT
|
INTEL[Intel Corporation]
|
DA28F640J5-150 DA28F320J5-120 G28F640J5-150 |
StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT 4M X 16 FLASH 5V PROM, 150 ns, PBGA56
|
Intel Corp. Intel, Corp.
|
GE28F640L30T85 GE28F640L30B85 GE28F640L30B110 GE28 |
1.8 Volt Intel StrataFlash? Wireless Memory with 3.0-Volt I/O (L30)
|
Intel Corporation
|
MB81ES171625-15WFKT-X MB81ES173225-15WFKT-X |
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP 单数据传输速率女的FCRAM消费/嵌入式SIP应用程序特定的内 SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP 1M X 16 SYNCHRONOUS DRAM, 12 ns, UUC84 SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP 512K X 32 SYNCHRONOUS DRAM, 12 ns, UUC84
|
Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
TE28F128J3D |
Embedded Flash Memory
|
Intel
|